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Design of a ternary memory cell using cntfets

WebApr 1, 2015 · In this Letter, we have presented a DCAM cell capable of ternary logic storage using four CNT transistors (CNTFETs). We have shown using SPICE …

Design of a Ternary Memory Cell Using CNTFETs - INFONA

WebIn addition, resistive random access memory (RRAM) is also a feasible option for the design of MVL circuits, owing to its multilevel cell capability that enables the storage of multiple resistance states within a single cell. In this manuscript, a design approach for ternary combinational logic circuits while using CNTFETs and RRAM is presented. WebMay 2, 2013 · By using four additional CNTFETs for ternary operation, a conventional (two-valued) sense amplifier is then used for output response. The contribution of this paper is … dr he oncologist https://pineleric.com

Design of a ternary memory cell using CNTFETs Request PDF - …

WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET technology along with a brief discussion on Stanford university model of CNTFET used for simulation of SRAM are discussed. WebJan 27, 2024 · This paper presents the design of a CNFET-based ternary content-addressable memory (TCAM) cell and rigorously analyzes its performance in terms of power–delay product (PDP) and static noise margin (SNM). The effect of variations of the chiral vector on the performance of the TCAM cell is also comprehensively investigated. WebA memory cell is designed for the construction of a ternary random-access-memory array (TRAM). A ternary decoder and encoder are presented to be the elements of a complete ternary read-only memory (TROM). A modified ternary inverter (MTI) is taken as a unit cell of the ternary memory matrix. dr heon yi

Design and Realization of Multiple Valued Logic Gates using …

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Design of a ternary memory cell using cntfets

An SEU-hardened ternary SRAM design based on efficient ternary C-ele…

WebJan 1, 2024 · A ternary content-addressable memory cell using carbon nanotube field-effect transistors (CNTFETs) is presented in this paper. The proposed ternary CAM cell … WebFeb 22, 2024 · A TCAM cell with an optimized CNTFET is proposed in this paper. The TCAM cell proposed is designed for improved performance using optimized CNTFET …

Design of a ternary memory cell using cntfets

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WebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to … WebJun 1, 2016 · This paper has initially presented two ternary CNTFET SRAMs based on a previously suggested standard ternary inverter. Sizing has been performed by grouping …

WebThis paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. WebJun 1, 2016 · Two ternary CNTFET SRAM cells (denoted as TC SRAM1 and TC SRAM2) are initially proposed in this paper to address these concerns; features such as sizing, SNM (Static Noise Margin), Power Delay Product (PDP) and write/read times are considered [16].

WebThis paper presents a novel design of ternary Static Read Access Memory (SRAM) using Carbon Nano-tube Field Effect Transistors (CNTFETs). Advantages of CNTFET … WebA novel hybrid cache replacement and migration policy is proposed; a hybrid macrocell is also designed using a different number of eDRAM, PCM …

WebJan 1, 2024 · This paper proposes a novel SEU-hardened ternary SRAM (TSRAM) cell based on an efficient ternary C-element (TC-element). The proposed design uses one supply voltage and dual-threshold CNTFETs, while the previous CNTFET-based TSRAMs need three different threshold voltages or two supply voltages.

WebDesign of a ternary memory cell using CNTFETs. S Lin, YB Kim, F Lombardi. IEEE transactions on nanotechnology 11 (5), 1019-1025, 2012. 156: 2012: Design of a CNTFET-based SRAM cell by dual-chirality selection. S Lin, YB Kim, F Lombardi. IEEE Transactions on Nanotechnology 9 (1), 30-37, 2009. 114: dr heo cmcWebOct 26, 2024 · The ternary logic is observed to be a better alternative to the traditional binary logic because it offers faster computations, smaller chip area, and lesser interconnects. Thus, it allows designing the low-complex, high-speed, and energy-efficient circuits in future digital design. dr he ophthalmologistWebJan 1, 2024 · In this paper, a robust ternary SRAM (TSRAM) cell is designed using a novel ternary C-element based on carbon nanotube field-effect transistors (CNTFETs). … dr. henzel \\u0026 smith dentist in cantonWebCarbon nanotube-based transistors (CNTFETs) have been shown to exhibit ambipolar field-effect transistor behavior, allowing circuit designers to easily choose between n - and p-conduction channels by applying correct voltages at a polarity gate.In this paper, we explore this ambipolar behavior of the CNTFET to design both binary and ternary content … entry doors with side panelWebApr 24, 2024 · Using carbon nanotube field effect transistors, (CNTFETs) the MVL gates are made which use N-type CNTFETs without utilizing any resistor. Thus this work helps both ternary and also quaternary logic gates exploiting the threshold voltages of both P and N type transistors. dr. heon in shawnee okWebThe CNTFET used for design has different threshold voltages to achieve ternary logic. This multi threshold voltage is obtained by varying the diameter of the CNT used. Chirality of the CNTFETs is utilized for varying the diameter of the CNT and it also avoids the usage of additional power supplies. The channel length used here is 18nm wide. dr hepatologueWebSep 1, 2012 · This paper presents a novel design of a ternary memory cell using carbon nanotube field-effect transistors (CNTFETs). Ternary logic is a promising alternative to conventional binary logic because it allows simplicity and energy efficiency in modern digital design due to the reduced circuit overhead in interconnects and chip area. dr henzes dickson city